On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

被引:0
|
作者
Gebauer, J. [1 ]
Rudolf, F. [1 ]
Polity, A. [1 ]
Krause-Rehberg, R. [1 ]
Martin, J. [2 ]
Becker, P. [2 ]
机构
[1] Martin-Luther-Univ. Halle-Wittenberg, Fachbereich Physik, D-06099 Halle, Germany
[2] Phys.-Tech.-Ba. Braunschweig, Fb. Experimentelle F., Bundesallee 100, D-38116 Braunschweig, Germany
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:411 / 416
相关论文
共 50 条
  • [1] On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon
    J. Gebauer
    F. Rudolf
    A. Polity
    R. Krause-Rehberg
    J. Martin
    P. Becker
    Applied Physics A, 1999, 68 : 411 - 416
  • [2] On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon
    Gebauer, J
    Rudolf, F
    Polity, A
    Krause-Rehberg, R
    Martin, J
    Becker, P
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (04): : 411 - 416
  • [3] POSITRON-ANNIHILATION SPECTROSCOPY OF NATIVE VACANCIES IN AS-GROWN GAAS
    CORBEL, C
    STUCKY, M
    HAUTOJARVI, P
    SAARINEN, K
    MOSER, P
    PHYSICAL REVIEW B, 1988, 38 (12): : 8192 - 8208
  • [4] Characterization of vacancies in as-grown and electron irradiated α-quartz by means of positron annihilation
    Dannefaer, S
    Bretagnon, T
    Craigen, D
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) : 190 - 197
  • [5] Positron annihilation investigation of vacancies in as-grown and electron-irradiated diamonds
    Pu, A
    Bretagnon, T
    Kerr, D
    Dannefaer, S
    DIAMOND AND RELATED MATERIALS, 2000, 9 (08) : 1450 - 1463
  • [6] POSITRON-ANNIHILATION AND CHARGE STATE OF THE VACANCIES IN AS-GROWN AND ELECTRON-IRRADIATED GAAS
    CORBEL, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 63 (1-2): : 166 - 172
  • [7] Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation
    Dannefaer, S
    Avalos, V
    Syväjärvi, M
    Yakimova, R
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 173 - 176
  • [8] Vacancies and negative ions in as-grown and ion-bombarded p-InP(Zn) observed by positron annihilation
    Chen, ZQ
    Wang, SJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) : 271 - 277
  • [9] THE STUDY OF NATIVE DEFECTS IN AS-GROWN GAAS BY POSITRON-ANNIHILATION
    FUJII, S
    UEDONO, A
    TANIGAWA, S
    HYPERFINE INTERACTIONS, 1993, 79 (1-4): : 719 - 723
  • [10] INDIUM VACANCY IN AS-GROWN INP - A POSITRON-ANNIHILATION STUDY
    BRETAGNON, T
    DANNEFAER, S
    KERR, D
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) : 4697 - 4699