共 50 条
- [1] On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon Applied Physics A, 1999, 68 : 411 - 416
- [2] On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (04): : 411 - 416
- [3] POSITRON-ANNIHILATION SPECTROSCOPY OF NATIVE VACANCIES IN AS-GROWN GAAS PHYSICAL REVIEW B, 1988, 38 (12): : 8192 - 8208
- [6] POSITRON-ANNIHILATION AND CHARGE STATE OF THE VACANCIES IN AS-GROWN AND ELECTRON-IRRADIATED GAAS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 63 (1-2): : 166 - 172
- [7] Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 173 - 176
- [9] THE STUDY OF NATIVE DEFECTS IN AS-GROWN GAAS BY POSITRON-ANNIHILATION HYPERFINE INTERACTIONS, 1993, 79 (1-4): : 719 - 723