On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

被引:0
|
作者
Gebauer, J. [1 ]
Rudolf, F. [1 ]
Polity, A. [1 ]
Krause-Rehberg, R. [1 ]
Martin, J. [2 ]
Becker, P. [2 ]
机构
[1] Martin-Luther-Univ. Halle-Wittenberg, Fachbereich Physik, D-06099 Halle, Germany
[2] Phys.-Tech.-Ba. Braunschweig, Fb. Experimentelle F., Bundesallee 100, D-38116 Braunschweig, Germany
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:411 / 416
相关论文
共 50 条
  • [41] Observation of native Ga vacancies in GaN by positron annihilation
    Saarinen, K
    Laine, T
    Kuisma, S
    Nissila, J
    Hautojarvi, P
    Dobrzynski, L
    Baranowski, JM
    Pakula, K
    Stepniewski, R
    Wojdak, M
    Wysmolek, A
    Suski, T
    Leszczynski, M
    Grzegory, I
    Porowski, S
    PHYSICAL REVIEW LETTERS, 1997, 79 (16) : 3030 - 3033
  • [42] Observation of native Ga vacancies in GaN by positron annihilation
    Saarinen, K
    Laine, T
    Kuisma, S
    Nissila, J
    Hautojarvi, P
    Dobrzynski, L
    Baranowski, JM
    Pakula, K
    Stepniewski, R
    Wojdak, M
    Wysmolek, A
    Suski, T
    Leszczynski, M
    Grzegory, I
    Porowski, S
    NITRIDE SEMICONDUCTORS, 1998, 482 : 757 - 762
  • [43] Atomic vacancies in quasicrystals - a study by positron annihilation spectroscopy
    Baier, F
    Schaefer, HE
    JOURNAL OF ALLOYS AND COMPOUNDS, 2002, 342 (1-2) : 318 - 320
  • [44] Vacancies and vacancy defects in Si observed by positron annihilation
    Hautojarvi, P
    Saarinen, K
    Makinen, J
    Corbel, C
    DEFECT AND DIFFUSION FORUM, 1998, 153 : 97 - 110
  • [45] OXIDE MICROPRECIPITATES IN AS-GROWN CZ SILICON
    INOUE, N
    OOSAKA, J
    WADA, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C365 - C366
  • [46] Migration of vacancies in deformed silver studied by positron annihilation
    Dryzek, J
    POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997, 1997, 255-2 : 533 - 535
  • [47] POSITRON-ANNIHILATION STUDIES OF PRODUCTION OF VACANCIES IN COPPER
    RICEEVANS, P
    HLAING, T
    REES, DB
    JOURNAL OF PHYSICS F-METAL PHYSICS, 1976, 6 (06): : 1079 - 1089
  • [48] STUDIES OF VACANCIES AND DISLOCATIONS IN TIAL BY POSITRON-ANNIHILATION
    SHIRAI, Y
    YAMAGUCHI, M
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1992, 152 (1-2): : 173 - 181
  • [49] Positron annihilation in diamond, silicon and silicon carbide
    Dannefaer, S.
    Applied Physics A: Materials Science and Processing, 1995, 61 (01): : 59 - 63
  • [50] Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon
    Isa, Fabio
    Schmidt, Javier A.
    Aghion, Stefano
    Napolitani, Enrico
    Isella, Giovanni
    Ferragut, Rafael
    JOURNAL OF APPLIED PHYSICS, 2024, 135 (16)