Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation

被引：0
|
作者：
Dannefaer, S [1 ]
Avalos, V
Syväjärvi, M
Yakimova, R
机构：
[1] Univ Winnipeg, Dept Phys, Winnipeg, MB R3B 2E9, Canada
[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷
关键词：
epilayer; positron annihilation; SiC; vacancies;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epilayers of 4H-SiC were investigated by positron annihilation spectroscopies: four epilayers and their substrates were investigated. The epilayers (47 to 220 mum thick) contained significantly lower grown-in vacancy concentration than did their substrates, and there was no dependency on layer thickness. Upon electron irradiation silicon vacancies were introduced at the same rate in epilayer and in substrate.
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页码：173 / 176
页数：4
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