Crystallization and conductivity of ReO3 thin films prepared by 90○ off-axis RF magnetron sputtering method

被引：0

作者：

Iwata, N ^{[1
]}

Fukai, K ^{[1
]}

Yamamoto, H ^{[1
]}

机构：

[1] Nihon Univ, Coll Sci & Technol, Dept Elect & Comp Sci, Funabashi, Chiba 2748501, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2004年 / E87C卷 / 02期

关键词：

ReO3; conductivity; post-anneal; reduction; infinite layer;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated growth conditions of the ReO3 thin films, as a first step of establishment of artificial superconducting multi-layer with the infinite layer cuprate and ReO3. The layers of ReO3 were expected to work as a charge reservoir block. The films were deposited from a Re metal target by off-axis reactive sputtering. Conductive and preferentially (100) oriented ReO3 thin films were obtained by in-situ post-annealing. The lowest resistivity was 4.4 x 10(-5) ohm-cm at room temperature.

引用

页码：223 / 226

页数：4

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