Crystallization and conductivity of ReO3 thin films prepared by 90○ off-axis RF magnetron sputtering method

被引：0
|
作者：
Iwata, N [1 ]
Fukai, K [1 ]
Yamamoto, H [1 ]
机构：
[1] Nihon Univ, Coll Sci & Technol, Dept Elect & Comp Sci, Funabashi, Chiba 2748501, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2004年 / E87C卷 / 02期
关键词：
ReO3; conductivity; post-anneal; reduction; infinite layer;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated growth conditions of the ReO3 thin films, as a first step of establishment of artificial superconducting multi-layer with the infinite layer cuprate and ReO3. The layers of ReO3 were expected to work as a charge reservoir block. The films were deposited from a Re metal target by off-axis reactive sputtering. Conductive and preferentially (100) oriented ReO3 thin films were obtained by in-situ post-annealing. The lowest resistivity was 4.4 x 10(-5) ohm-cm at room temperature.
引用
收藏
页码：223 / 226
页数：4
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