Vanadium oxide thin films prepared by RF magnetron sputtering method

被引：0
|
作者：
Li, ZS [1 ]
Wu, ST [1 ]
Li, J [1 ]
Guo, DH [1 ]
Xu, FC [1 ]
机构：
[1] Xiamen Univ, Pen Tung Sah MEMS Res Ctr, Xiamen 361005, Peoples R China
来源：
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2004年 / 5774卷
关键词：
RF magnetron sputtering; vanadium oxide thin film; XRD; XPS; laser scanning confocal microscope;
D O I：
10.1117/12.607548
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The vanadium oxide thin films were prepared by R.F. magnetron sputtering method under different deposition conditions. The microstructures of the samples have been investigated by XRD, XPS, and the Laser Scanning Confocal Microscope. By XRD and XPS, it was found that properly decreasing substrate temperature or increasing sputtering power, larger crystalline particle size and better crystalline orientation with V2O5 (001) after annealing can be gotten; Properly increasing substrate temperature or reducing sputtering power, the proportions of high valence vanadium oxides are increased. Based on our analyses, high-purity vanadium pentoxide films have been prepared by adjusting flux ratio of O-2 and Ar, substrate temperature, and sputtering power.
引用
收藏
页码：148 / 151
页数：4
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