In-situ nanoindentation of Si in the high voltage electron microscope

被引：0

作者：

Wall, MA ^{[1
]}

Dahmen, U ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, C&MS, Livermore, CA 94550 USA

来源：

ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2 | 1998年

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D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

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页码：493 / 494

页数：2

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