In-situ nanoindentation of Si in the high voltage electron microscope

被引：0
|
作者：
Wall, MA [1 ]
Dahmen, U [1 ]
机构：
[1] Univ Calif Lawrence Livermore Natl Lab, C&MS, Livermore, CA 94550 USA
来源：
ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2 | 1998年
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
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页码：493 / 494
页数：2
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