In-situ nanoindentation of Si in the high voltage electron microscope

被引:0
|
作者
Wall, MA [1 ]
Dahmen, U [1 ]
机构
[1] Univ Calif Lawrence Livermore Natl Lab, C&MS, Livermore, CA 94550 USA
关键词
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:493 / 494
页数:2
相关论文
共 50 条
  • [31] Fracture of polycrystalline graphene membranes by in situ nanoindentation in a scanning electron microscope
    Suk, Ji Won
    Mancevski, Vladimir
    Hao, Yufeng
    Liechti, Kenneth M.
    Ruoff, Rodney S.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2015, 9 (10): : 564 - 569
  • [32] Electron microscope loading and in situ nanoindentation of water ice at cryogenic temperatures
    Dubosq, Renelle
    Woods, Eric
    Gault, Baptiste
    Best, James P.
    PLOS ONE, 2023, 18 (02):
  • [33] Reconstruction of an ultrahigh vacuum reflection electron microscope for in-situ high temperature observation
    Iida, Shin-Ichi
    Awata, Shogo
    Asahata, Tatsuya
    Nagatomi, Takaharu
    Kimura, Yoshihide
    Takai, Yoshizo
    Shimizu, Ryuichi
    Technology Reports of the Osaka University, 1999, 49 (2348): : 99 - 104
  • [34] IN-SITU MEASUREMENT OF OBJECTIVE LENS DATA OF A HIGH-RESOLUTION ELECTRON MICROSCOPE
    HEINEMANN, K
    OPTIK, 1971, 34 (02): : 113 - +
  • [35] In-situ transmission electron microscopy study of the nanoindentation behavior of Al
    Minor, AM
    Lilleodden, ET
    Stach, EA
    Morris, JW
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (10) : 958 - 964
  • [36] In-situ transmission electron microscopy study of the nanoindentation behavior of Al
    A. M. Minor
    E. T. Lilleodden
    E. A. Stach
    J. W. Morris
    Journal of Electronic Materials, 2002, 31 : 958 - 964
  • [37] In-situ operation of a scanning tunnelling microscope in a UHV transmission electron microscope
    Ohnishi, H
    Kondo, Y
    Takayanagi, K
    ELECTRON, 1998, : 501 - 506
  • [38] In situ measurement of electrical conductivity of alumina under electron irradiation in a high voltage electron microscope
    Howlader, MMR
    Kinoshita, C
    Izu, T
    Shiiyama, K
    Kutsuwada, M
    JOURNAL OF NUCLEAR MATERIALS, 1996, 239 (1-3) : 245 - 252
  • [39] TEM OBSERVATIONS OF DISLOCATION-MOTION IN POLYCRYSTALLINE SILICON DURING IN-SITU STRAINING IN THE HIGH-VOLTAGE ELECTRON-MICROSCOPE
    WERNER, M
    BARTSCH, M
    MESSERSCHMIDT, U
    BAITHER, D
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 146 (01): : 133 - 143
  • [40] HIGH-VOLTAGE ELECTRON MICROSCOPE
    COSSLETT, VE
    CONTEMPORARY PHYSICS, 1968, 9 (04) : 333 - &