Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor

被引：1
|
作者：
Chang, You-Tai [1 ]
Li, Pei-Wen [1 ]
Lin, Horng-Chih [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan
来源：
2019 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2019年
关键词：
D O I：
10.23919/snw.2019.8782974
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Four-level random-telegraph-noise (RTN) characteristics of a gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistor induced by two discrete traps are studied in this work. By carefully analyzing the RTN, depths of the two traps in the gate oxide can be identified separately. Consistent information is obtained by assessing the probability of transitions between different levels.
引用
收藏
页码：123 / 124
页数：2
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