Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels

被引：5
|
作者：
Tsai, Jung-Ruey [1 ]
Lee, Ko-Hui [2 ,3 ]
Lin, Horng-Chih [2 ,3 ,4 ]
Huang, Tiao-Yuan [4 ]
机构：
[1] Asia Univ, Dept Photon & Commun Engn, Taichung 413, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[4] Natl Nano Device Labs, Hsinchu 300, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期
关键词：
D O I：
10.7567/JJAP.53.04ED14
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work. The enhanced electric field around the corners of the NW channels boosts more electrons tunneling through the tunnel oxide layer during programming and erasing (P/E) processes, and thus the operation voltage markedly decreases. Furthermore, the nonlocalized trapping feature characteristic of the FG makes the injection of electrons easier during the programming operation, which was demonstrated by technology computer-aided design (TCAD) simulations. (C) 2014 The Japan Society of Applied Physics
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页数：5
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