Surface plasmon leakage in its coupling with an InGaN/GaN quantum well through an Ohmic contact

被引：0

作者：

Yeh, Dong-Ming ^{[1
]}

Huang, Chi-Feng ^{[1
]}

Lu, Yen-Cheng ^{[1
]}

Chen, Cheng-Yen ^{[1
]}

Tang, Tsung-Yi ^{[1
]}

Huang, Jeng-Jie ^{[1
]}

Shen, Kun-Ching ^{[1
]}

Yang, Ying-Jay ^{[1
]}

Yang, C. C. ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

来源：

2007 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS | 2007年

关键词：

surface plasmon; quantum well; Ohmic contact;

D O I：

10.1109/OMEMS.2007.4373872

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the loss of surface plasmon (SP) energy through oscillating electron leakage via the Ohmic contact of either p-type or n-type GaN layer in the coupling process between SP and an InGaN/GaN quantum well (QW). The observation implies that in using the SP-QW coupling for enhancing emission in a light-emitting diode, the metals for Ohmic contact and SP generation must be separated. A thin dielectric interlayer is required in the region for SP-QW coupling to avoid the leakage of SP energy.

引用

页码：125 / 126

页数：2

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