Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures

被引：0
|
作者：
Klymenko, M. V. [1 ]
Shulika, O. V. [1 ]
Sukhoivanov, I. A. [2 ]
机构：
[1] Kharkov Natl Univ Radio Elect, Lab Photon, UA-61166 Kharkov, Ukraine
[2] Univ Guanajuato, Div Engn, Dept Elect, Salamanca 36885, Mexico
来源：
7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES (LDSD 2011) | 2014年 / 1598卷
关键词：
surface segregation; quantum well; piezoelectric polarization; absorption spectrum; STRAIN; LAYERS;
D O I：
10.1063/1.4878296
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.
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收藏
页码：142 / 145
页数：4
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