Carrier dynamics in InGaN/GaN multiple quantum well structures

被引：1
|
作者：
Feng, SW [1 ]
Cheng, YC [1 ]
Chung, YY [1 ]
Mao, MH [1 ]
Yang, CC [1 ]
Lin, YS [1 ]
Ma, KJ [1 ]
Chyi, JI [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
来源：
DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II | 2001年 / 4594卷
关键词：
carrier dynamics; localized states; InGaN/GaN quantum well; carrier lifetime;
D O I：
10.1117/12.446546
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature. The fast decay component was essentially due to carrier dynamics, that is, carrier flow between strongly localized and weakly localized states. Such a carrier relaxation process results in extremely long PL decay time (up to almost 300 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.
引用
收藏
页码：197 / 200
页数：4
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