Depletion-type organic thin-film transistors based on solution-processed iron phthalocyanines fabricated on plastic substrates

被引:3
|
作者
Luna, Anayantzi [1 ]
Obregon, Ovier [1 ]
Sosa-Sanchez, Jose L. [1 ]
Dominguez, Miguel A. [1 ]
机构
[1] Benemerita Univ Autonoma Puebla BUAP, Ctr Invest Disposit Semicond, Inst Ciencias, Puebla 72570, Mexico
关键词
Iron II phthalocyanine; organic thin film transistors; spin-on glass; plastic electronics; ELECTRONIC-STRUCTURES; TEMPERATURE; STABILITY;
D O I
10.1007/s12034-021-02607-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, iron phthalocyanine (FePc) thin films were obtained by spin-coating at 80 degrees C and used as the active layer in organic thin-film transistors (OTFTs). The OTFTs have an inverted coplanar structure and were fabricated on plastic substrates made of polyethylene terephthalate. Silicon oxide spin-on glass was used as gate dielectric. The FePc thin films were characterized by UV-Vis spectroscopy, Raman spectroscopy and current-voltage measurements. Interestingly, the electrical characteristics of the FePc OTFTs exhibited a depletion-type behaviour. The threshold voltage extracted was -1.18 V, the subthreshold slope was 0.1 V per decade and the field-effect mobility was 0.002 cm(2) Vs(-1). As far as we know, this is the first report of FePc-based OTFTs on plastic substrates.
引用
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页数:4
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