Depletion-type thin-film transistors with a ferroelectric insulator

被引：79
|
作者：
Prins, MWJ [1 ]
Zinnemers, SE [1 ]
Cillessen, JFM [1 ]
Giesbers, JB [1 ]
机构：
[1] EINDHOVEN UNIV TECHNOL,DEPT APPL PHYS,NL-5600 MB EINDHOVEN,NETHERLANDS
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期
关键词：
D O I：
10.1063/1.118180
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7 x 10(3). Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors. (C) 1997 American Institute of Physics.
引用
收藏
页码：458 / 460
页数：3
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