A 22-Gbit/s static decision IC made with a novel D-type flip-flop

被引：0
|
作者：
Narahara, K [1 ]
Otsuji, T
Tokumitsu, M
机构：
[1] NTT, Network Innovat Labs, Yokosuka, Kanagawa 2390847, Japan
[2] NTT Elect Corp, Atsugi, Kanagawa 2430198, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1999年 / E82C卷 / 03期
关键词：
decision IC; GaAs MESFET; static D-FF; SCFL circuitry;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report on a 22-Gbit/s static decision IC fabricated with 0.12-mu m GaAs MESFETs. The key to attaining high-speed decision IC is the employment of a novel high-speed D-type Rip-flop (D-FF). The D-FF succeeds in Easter operation through the simplification of the circuitry and the reduction of the transition time of the output voltages.
引用
收藏
页码：559 / 561
页数：3
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