Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering

被引:70
|
作者
Kong, Qinghua [1 ,2 ]
Ji, Li [1 ]
Li, Hongxuan [1 ]
Liu, Xiaohong [1 ]
Wang, Yongjun [1 ,2 ]
Chen, Jianmin [1 ]
Zhou, Huidi [1 ]
机构
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
CrN films; Medium frequency magnetron sputtering; Substrate bias voltage; Microstructure; Residual stress; CHROMIUM NITRIDE FILMS; MECHANICAL-PROPERTIES; TITANIUM NITRIDE; PULSE FREQUENCY; COATINGS; GROWTH; TEMPERATURE;
D O I
10.1016/j.mseb.2011.04.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, CrN films were deposited on stainless steel and Si (1 1 1) substrates via medium frequency magnetron sputtering under a systematic variation of the substrate bias voltage. The influence of the substrate bias voltage on the structural and the mechanical properties of the films were investigated. It is observed that there are two clear regions: (1) below -300V, and (2) above -300V. For the former region, the (1 1 1) texture is dominated as the substrate bias voltage is increased to -200V. The lattice parameter is smaller than that of CrN reported in the ICSD standard (4.140 angstrom) and the as-deposited films exhibit tensile stress. Meanwhile, the surface roughness decreases and the N concentration show a slow increase. For the latter region, the (2 0 0)-oriented structure is formed. However, the lattice parameter is larger as compared with the value reported in the ICSD standard, and the surface roughness increases and the N concentration decreases obviously. In this case, the compressive stress is obtained. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:850 / 854
页数:5
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