Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering

被引:70
|
作者
Kong, Qinghua [1 ,2 ]
Ji, Li [1 ]
Li, Hongxuan [1 ]
Liu, Xiaohong [1 ]
Wang, Yongjun [1 ,2 ]
Chen, Jianmin [1 ]
Zhou, Huidi [1 ]
机构
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
CrN films; Medium frequency magnetron sputtering; Substrate bias voltage; Microstructure; Residual stress; CHROMIUM NITRIDE FILMS; MECHANICAL-PROPERTIES; TITANIUM NITRIDE; PULSE FREQUENCY; COATINGS; GROWTH; TEMPERATURE;
D O I
10.1016/j.mseb.2011.04.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, CrN films were deposited on stainless steel and Si (1 1 1) substrates via medium frequency magnetron sputtering under a systematic variation of the substrate bias voltage. The influence of the substrate bias voltage on the structural and the mechanical properties of the films were investigated. It is observed that there are two clear regions: (1) below -300V, and (2) above -300V. For the former region, the (1 1 1) texture is dominated as the substrate bias voltage is increased to -200V. The lattice parameter is smaller than that of CrN reported in the ICSD standard (4.140 angstrom) and the as-deposited films exhibit tensile stress. Meanwhile, the surface roughness decreases and the N concentration show a slow increase. For the latter region, the (2 0 0)-oriented structure is formed. However, the lattice parameter is larger as compared with the value reported in the ICSD standard, and the surface roughness increases and the N concentration decreases obviously. In this case, the compressive stress is obtained. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:850 / 854
页数:5
相关论文
共 50 条
  • [31] Influence of Substrate Temperature on Microstructure of Zirconium Silicon Nitride Thin Films Deposited by Reactive Magnetron Sputtering
    Oliveira, F. S.
    Dias, I. L.
    Araujo, P. L. L.
    Ramirez, D. A.
    Neto, P. C. Silva
    Hubler, R.
    Mendes, F. M. T.
    Damasceno, I. Z.
    Tentardini, E. K.
    [J]. MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 2023, 26
  • [32] Effect of substrate bias voltage on corrosion of TiN/Ti multilayers deposited by magnetron sputtering
    Flores, M.
    Huerta, L.
    Escamilla, R.
    Andrade, E.
    Muhl, S.
    [J]. APPLIED SURFACE SCIENCE, 2007, 253 (17) : 7192 - 7196
  • [33] The Influence of Bias Voltage on the Structure and Properties of TiZrNbMo Coating Deposited by Magnetron Sputtering
    Romaniuk, Svitlana
    Nowakowska-Langier, Katarzyna
    Strzelecki, Grzegorz Witold
    Mulewska, Katarzyna
    Minikayev, Roman
    [J]. COATINGS, 2024, 14 (07)
  • [34] Effect of bias voltage polarity of a substrate on the texture, microstructure, and magnetic properties of Ni films prepared by magnetron sputtering
    Dzhumaliev, A. S.
    Nikulin, Yu. V.
    Filimonov, Yu. A.
    [J]. PHYSICS OF THE SOLID STATE, 2016, 58 (06) : 1247 - 1256
  • [35] Effect of bias voltage polarity of a substrate on the texture, microstructure, and magnetic properties of Ni films prepared by magnetron sputtering
    A. S. Dzhumaliev
    Yu. V. Nikulin
    Yu. A. Filimonov
    [J]. Physics of the Solid State, 2016, 58 : 1247 - 1256
  • [36] Effect of Substrate Bias Voltage on the Properties of Hafnium Nitride Films Deposited by Radio Frequency Magnetron Sputtering Assisted by Inductive Coupled Nitrogen Plasma
    Heo, Sung Bo
    Lee, Hak Min
    Kim, Daeil
    Choi, Dae Han
    Lee, Byung Hoon
    Kim, Min Gyu
    Lee, Jin Hee
    [J]. TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2011, 12 (05) : 209 - 212
  • [37] Influence of film density on residual stress and resistivity for Cu thin films deposited by bias sputtering
    Choi, HM
    Choi, SK
    Anderson, O
    Bange, K
    [J]. THIN SOLID FILMS, 2000, 358 (1-2) : 202 - 205
  • [38] Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature
    Liu, H. Y.
    Tang, G. S.
    Zeng, F.
    Pan, F.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2013, 363 : 80 - 85
  • [39] GaN films deposited on glass substrate by middle-frequency magnetron sputtering
    Zou, C. W.
    Yin, M. L.
    Li, M.
    Liu, C. S.
    Guo, L. P.
    Fu, D. J.
    [J]. THIN SOLID FILMS, 2008, 517 (02) : 670 - 673
  • [40] XPS analysis of ZnO:Ga films deposited by magnetron sputtering: Substrate bias effect
    Correia, F. C.
    Bundaleski, N.
    Teodoro, O. M. N. D.
    Correia, M. R.
    Rebouta, L.
    Mendes, A.
    Tavares, C. J.
    [J]. APPLIED SURFACE SCIENCE, 2018, 458 : 1043 - 1049