Gate Drive Investigations of IGBT Modules with SiC-Schottky Freewheeling Diodes

被引：0
|
作者：
Ren, Na [1 ]
Sheng, Kuang [1 ]
Zhang, Junming [1 ]
Peng, Fangzheng [2 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310003, Zhejiang, Peoples R China
[2] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
来源：
2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2013年
关键词：
CIRCUIT;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, a current source driver is presented for IGBT modules. For conventional voltage source gate driver, the influence of the gate drive resistance on switching performances is investigated for IGBT modules with SiC-Schottky freewheeling diodes. The influence on turn-off switching losses is marginal while a reduction by a factor of 3 can be achieved for turn-on switching losses when the gate drive resistance reduced from 40 Omega to 10 Omega. The current source driver can achieve a turn-on loss reduction by a factor of 14 when compared to the conventional gate driver with 40 Omega gate drive resistance, without a large I-rr due to the SiC-Schottky freewheeling diode. Experimental results are presented to show the IGBT switching performance with this proposed fast gate driver.
引用
收藏
页码：2871 / 2876
页数：6
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