Unsymmetrical Gate Voltage Drive for High Power 1200V IGBT4 Modules Based on Coreless Transformer Technology Driver

被引：8
|
作者：
Luniewski, Piotr [1 ]
Jansen, Uwe [1 ]
机构：
[1] Infineon Technol AG Applicat Engn, Warstein, Germany
来源：
2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5 | 2008年
关键词：
IGBT; Power semiconductor device; High voltage IC's; Thermal design;
D O I：
10.1109/EPEPEMC.2008.4635249
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The performance of the new IGBT4 chip technology in PrimePACK (TM) high power module housing is presented here together with the Coreless Transformer technology driver IC for the first time in this paper. These modules usually are driven using symmetrical gate drive voltage of +/-15V. The driver presented here uses unsymmetrical gate drive voltage of -7V and +15V. This alternate approach results in different dynamic module behaviour compared to classical. Thus, this paper discusses differences in both concepts and brings a solution which allows to use the unsymmetrical concept as well as symmetrical.
引用
收藏
页码：88 / 96
页数：9
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