Gate Drive Investigations of IGBT Modules with SiC-Schottky Freewheeling Diodes

被引：0

作者：

Ren, Na ^{[1
]}

Sheng, Kuang ^{[1
]}

Zhang, Junming ^{[1
]}

Peng, Fangzheng ^{[2
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310003, Zhejiang, Peoples R China

[2] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA

来源：

2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2013年

关键词：

CIRCUIT;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, a current source driver is presented for IGBT modules. For conventional voltage source gate driver, the influence of the gate drive resistance on switching performances is investigated for IGBT modules with SiC-Schottky freewheeling diodes. The influence on turn-off switching losses is marginal while a reduction by a factor of 3 can be achieved for turn-on switching losses when the gate drive resistance reduced from 40 Omega to 10 Omega. The current source driver can achieve a turn-on loss reduction by a factor of 14 when compared to the conventional gate driver with 40 Omega gate drive resistance, without a large I-rr due to the SiC-Schottky freewheeling diode. Experimental results are presented to show the IGBT switching performance with this proposed fast gate driver.

引用

页码：2871 / 2876

页数：6

共 44 条

[21] Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case
Gorecki, Krzysztof
Bisewski, Damian
Zarebski, Janusz
Kisiel, Ryszard
Mysliwiec, Marcin
CIRCUIT WORLD, 2017, 43 (01) : 38 - 42
[22] Investigations on surge current capability of SiC Schottky diodes by implementation of new pad metallizations
Hilsenbeck, Jochen
Treu, Michael
Rupp, Roland
Rueschenschmidt, Kathrin
Kern, Ronny
Holz, Matthias
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 673 - +
[23] Design Considerations and Comparison of High-speed Gate Drivers for Si IGBT and SiC MOSFET Modules
Yin, Shan
Tseng, K. J.
Tu, Pengfei
Simanjorang, Rejeki
Gupta, Amit K.
2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
[24] Hybrid 3.3 kV/450 A half-bridge IGBT power module with SiC Schottky barrier diodes
Li, Daohui
Luo, Haoze
Huang, Yue
Li, Xiang
Qi, Fang
Packwood, Matthew
Luo, Haihui
Chen, Ximing
Li, Chengzhan
Wang, Yangang
Dai, Xiaoping
Liu, Guoyou
IET POWER ELECTRONICS, 2020, 13 (03) : 405 - 412
[25] Investigations of SiC merged pin Schottky diodes under isothermal and non-isothermal conditions
Zarebski, J.
Dabrowski, J.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2011, 24 (03) : 207 - 217
[26] Investigation of the Turn-on Behaviour of Silicon pin-Diodes and SiC-Schottky-Diodes and its Impact on the Anti-parallel IGBT
Rugen, Sarah
Boedeker, Christian
Kortazar, Itziar
Larrazabal, Igor
Friedrichs, Peter
Kaminski, Nando
2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE), 2016,
[27] SiC versus Si Freewheeling Diodes: A Comparative Study of their Impact on IGBT VCE Overshoot in 3-level T-type Power Converters
Kadavelugu, Arun
Raheja, Utkarsh
Mobarrez, Maziar
Za, Eddy Aelo
Rodrigues, Rostan
2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), 2019, : 219 - 224
[28] Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes
仲雪倩
王珏
王宝柱
王珩宇
郭清
盛况
Chinese Physics B, 2018, 27 (08) : 470 - 479
[29] Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes
Zhong, Xue-Qian
Wang, Jue
Wang, Bao-Zhu
Wang, Heng-Yu
Guo, Qing
Sheng, Kuang
CHINESE PHYSICS B, 2018, 27 (08)
[30] Switching Performance Comparison of 1200 V and 1700 V SiC Optimized Half Bridge Power Modules with SiC Antiparallel Schottky Diodes versus MOSFET Intrinsic Body Diodes
Martin, Daniel
Curbow, W. Austin
Sparkman, Brett
Kegley, Lauren E.
McNutt, Ty
2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2017, : 2297 - 2304

← 1 2 3 4 5 →