ADVANCED N-CHANNEL LDMOS WITH ULTRALOW SPECIFIC ON-RESISTANCE BY 0.18 μm EPITAXIAL BCD TECHNOLOGY

被引：0
|
作者：
Yao, Yao [1 ]
Hu, Linhui [2 ]
Wang, Gangning [2 ]
Pu, Shanon [2 ]
Lin, Min-Zhi [1 ]
Ye, Zhiyuan [1 ]
Wang, Peng-Fei [1 ]
机构：
[1] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
[2] Semicond Mfg Int Corp, Shanghai 201203, Peoples R China
来源：
2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2018年
关键词：
6; V;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
An advanced n-channel LDMOS (nLDMOS) by 0.18 mu m epitaxial BCD Technology is proposed with the best-in-class performance. Thin drift region oxidation by independent LOCOS process is adopted and optimized to improve the trade-off between breakdown voltage (BV) and specific ON-resistance (R-on,R-sp). Both P-Body and N-Drift region vertical doping optimization is developed accordingly to improve the reliability of the device. Both 20 V and 30 V nLDMOS devices are designed, and experimental results show that ultralow Ron, sp has been demonstrated (i.e., R-on,R- sp = 6.5 m Omega center dot mm(2) for BV = 27.6 V, R-on,R- sp = 9.6 m Omega center dot mm(2) for BV = 37.3 V, respectively). Moreover, the electrical safe operating area (SOA) and hot-carrier injection (HCI) are also improved.
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页数：3
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