ADVANCED N-CHANNEL LDMOS WITH ULTRALOW SPECIFIC ON-RESISTANCE BY 0.18 μm EPITAXIAL BCD TECHNOLOGY

被引：0

作者：

Yao, Yao ^{[1
]}

Hu, Linhui ^{[2
]}

Wang, Gangning ^{[2
]}

Pu, Shanon ^{[2
]}

Lin, Min-Zhi ^{[1
]}

Ye, Zhiyuan ^{[1
]}

Wang, Peng-Fei ^{[1
]}

机构：

[1] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China

[2] Semicond Mfg Int Corp, Shanghai 201203, Peoples R China

来源：

2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2018年

关键词：

6; V;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An advanced n-channel LDMOS (nLDMOS) by 0.18 mu m epitaxial BCD Technology is proposed with the best-in-class performance. Thin drift region oxidation by independent LOCOS process is adopted and optimized to improve the trade-off between breakdown voltage (BV) and specific ON-resistance (R-on,R-sp). Both P-Body and N-Drift region vertical doping optimization is developed accordingly to improve the reliability of the device. Both 20 V and 30 V nLDMOS devices are designed, and experimental results show that ultralow Ron, sp has been demonstrated (i.e., R-on,R- sp = 6.5 m Omega center dot mm(2) for BV = 27.6 V, R-on,R- sp = 9.6 m Omega center dot mm(2) for BV = 37.3 V, respectively). Moreover, the electrical safe operating area (SOA) and hot-carrier injection (HCI) are also improved.

引用

页数：3

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