Extreme ultraviolet plasma source for future lithography

被引：5
|
作者：
Wagenaars, Erik [1 ]
Mader, Arnaud [3 ]
Bergmann, Klaus [2 ]
Jonkers, Jeroen [3 ]
Neff, Willi [2 ]
机构：
[1] Univ Aachen, Rhein Westfal TH Aachen, Chair Laser Technol, D-52074 Aachen, Germany
[2] Fraunhofer Inst Laser Tech, D-52074 Aachen, Germany
[3] Philips Extreme UV GmbH, D-52074 Aachen, Germany
来源：
IEEE TRANSACTIONS ON PLASMA SCIENCE | 2008年 / 36卷 / 04期
关键词：
extreme ultraviolet; gas discharges; lithography; plasma pinch;
D O I：
10.1109/TPS.2008.917780
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
An extreme ultraviolet (EUV) plasma source intended for future lithography applications is presented. The plasma source efficiently emits EUV light around 13.5 nm with 2% bandwidth. Debris mitigation and collector systems are successfully implemented to achieve a focused beam of debris-free EUV photons that can be used in EUV lithography.
引用
收藏
页码：1280 / 1281
页数：2
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