Power scaling of an extreme ultraviolet light source for future lithography

被引：7

作者：

Wagenaars, Erik ^{[1
]}

Kuepper, Felix ^{[2
]}

Klein, Juergen ^{[2
]}

Neff, Willi ^{[2
]}

Damen, Marcel ^{[3
]}

van der Wel, Pieter ^{[3
]}

Vaudrevange, Dominik ^{[3
]}

Jonkers, Jeroen ^{[3
]}

机构：

[1] Univ Aachen, Rhein Westfal TH Aachen, Chair Laser Technol, D-52074 Aachen, Germany

[2] Fraunhofer Inst Laser Technol, D-52074 Aachen, Germany

[3] Philips Extreme UV GmbH, D-52074 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期

关键词：

D O I：

10.1063/1.2924299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For future lithography applications, high-power extreme ultraviolet (EUV) light sources are needed at a central wavelength of 13.5 nm within 2% bandwidth. We have demonstrated that from a physics point of view the Philips alpha-prototype source concept is scalable up to the power levels required for high-volume manufacturing (HVM) purposes. Scalability is shown both in frequency, up to 100 kHz, and pulse energy, up to 55 mJ collectable EUV per pulse, which allows us to find an optimal working point for future HVM sources within a wide parameter space. (C) 2008 American Institute of Physics.

引用

页数：3

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