A G-band High-Gain Power Amplifier with Positive Voltage-Feedback in 55-nm CMOS Technology

被引：0
|
作者：
Zhang, Xin [1 ]
Meng, Fanyi [1 ]
Fu, Haipeng [1 ]
Ma, Kaixue [1 ]
Ma, Jianguo [2 ]
机构：
[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China
[2] Guangdong Univ Technol, Sch Comp, Guangzhou, Guangdong, Peoples R China
来源：
2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020) | 2020年
基金：
中国国家自然科学基金;
关键词：
TRANSCEIVER;
D O I：
10.1109/ucmmt49983.2020.9296080
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a five-stage single-ended G-band power amplifier (PA) using 55-nm CMOS process. Each stage of the PA adopts common source topology with positive voltage-feedback coupled through adjacent coplanar waveguide (CPW) stubs. Full-wave simulation shows a saturated output power of 9 dBm, output P-1dB of 4.3 dBm, a small signal gain of 24 dB, and a peak PAE of 10%, with supply voltage of 1.2V. The 3-dB bandwidth of this PA is 18 GHz from 163 to 181 GHz.
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页数：3
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