A G-band High-Gain Power Amplifier with Positive Voltage-Feedback in 55-nm CMOS Technology

被引：0

作者：

Zhang, Xin ^{[1
]}

Meng, Fanyi ^{[1
]}

Fu, Haipeng ^{[1
]}

Ma, Kaixue ^{[1
]}

Ma, Jianguo ^{[2
]}

机构：

[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China

[2] Guangdong Univ Technol, Sch Comp, Guangzhou, Guangdong, Peoples R China

来源：

2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

TRANSCEIVER;

D O I：

10.1109/ucmmt49983.2020.9296080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a five-stage single-ended G-band power amplifier (PA) using 55-nm CMOS process. Each stage of the PA adopts common source topology with positive voltage-feedback coupled through adjacent coplanar waveguide (CPW) stubs. Full-wave simulation shows a saturated output power of 9 dBm, output P-1dB of 4.3 dBm, a small signal gain of 24 dB, and a peak PAE of 10%, with supply voltage of 1.2V. The 3-dB bandwidth of this PA is 18 GHz from 163 to 181 GHz.

引用

页数：3

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