Spin-dependent resonant tunneling in symmetrical double-barrier structures

被引：124

作者：

Glazov, MM ^{[1
]}

Alekseev, PS ^{[1
]}

Odnoblyudov, MA ^{[1
]}

Chistyakov, VM ^{[1
]}

Tarasenko, SA ^{[1
]}

Yassievich, IN ^{[1
]}

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.71.155313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of noncentrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field and (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.

引用

页数：5

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