Spin-dependent tunneling in double-barrier semiconductor heterostructures

被引：111
|
作者：
Voskoboynikov, A
Liu, SS
Lee, CP
机构：
[1] Natl Chiao Tung Univ, Hsinchu 30010, Taiwan
[2] Kiev Taras Shevchenko Univ, UA-252030 Kiev, Ukraine
来源：
PHYSICAL REVIEW B | 1999年 / 59卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.59.12514
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spin-dependent tunneling in symmetric and asymmetric double-barrier semiconductor heterostructures is studied. The effective one-band Hamiltonian approximation and spin-dependent boundary conditions approach an used for a theoretical investigation of the influence of electron spin on the tunneling probability. It is shown that spin-orbit splitting in the dispersion relation for electrons in A(III)B(V) semiconductors can provide the dependence of the tunneling transmission probability on the electron-spin polarization without additional magnetic field. The dependence can be controlled by an external electric field, and may be significant for realistic models of double-barrier semiconductor heterostructures. [S0163-1829(99)02320-6].
引用
收藏
页码：12514 / 12520
页数：7
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