Abnormal threshold voltage shifts in p-channel low temperature polycrystalline silicon TFTs under deep UV irradiation

被引：0
|
作者：
Cheng, Hong [1 ,2 ]
Lin, Xinnan [1 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
[2] TCL China Star Optoelect Technol Co Ltd, Array Technol Dev Dept, 9-2 Tangming Ave, Shenzhen 518055, Peoples R China
来源：
AIP ADVANCES | 2021年 / 11卷 / 08期
关键词：
LEAKAGE CURRENT; INSTABILITY; TRANSISTORS;
D O I：
10.1063/5.0060553
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of p-channel low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) under deep ultraviolet (UV) irradiation were studied. Characteristics including threshold voltage (V-th), hole field effect mobility (mu(eff)) subthreshold swing (SS), and leakage current (I-off) were investigated as a function of UV irradiation doses from 4 to 20 J/cm(2). With an increase in UV irradiation dosage, the V-th shift of the TFT showed a turnaround effect, which first shifted to the positive direction and then shifted back to the negative direction after a UV irradiation dose of 16 J/cm(2). The continuous degradation of SS and mu(eff) was discovered with the enhancement of UV irradiation dose. To better understand the physical mechanisms underlying these characteristic changes, UV induced traps at poly-Si grain boundaries, traps at the poly-Si and gate oxide insulator (poly-Si/SiO2) interface, and trapped charges in the gate oxide were studied with a function of UV irradiation doses.
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页数：7
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