DEPENDENCE OF THRESHOLD VOLTAGE OF SILICON P-CHANNEL MOSFETS ON CRYSTAL ORIENTATION

被引：3
|
作者：
LEUENBERGER, F
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 12期
关键词：
D O I：
10.1109/PROC.1966.5319
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1985 / +
页数：1
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