Epitaxial growth of InGaSb layers on GaAs substrates for fabrication of InGaSb-based THz-QCLs

被引：0

作者：

Yasuda, Hiroaki ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

来源：

2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose InGaSb-well-based THz-QCLs for higher temperature operation. For the preparation of the MBE growth of the InGaSb-well-based QCLs, we optimize growth conditions of InGaSb layers on a GaAs substrate with introducing an InxGa1-xSb graded buffer layer.

引用

页数：2

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