Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates

Heterostructures HgCdTe/CdTe/GaAs grown by molecular beam epitaxy were used for LWIR FPA fabrication. The technology was developed and 32x32 and 128x128 photodiode arrays with indium bumps of 15 mu m heigh in each pixel were fabricated, Mean NEP is 1.7x10(-13) W/Hz(1/2) and 1.1x10(-14) W/Hz(1/2) for 128x128 photodiode arrays with lambda(c) value of 10.4 mu m and 5,2 mu m correspondently, The technology of hybrid assembling with continuous control of cold welding on the measuring stand was demonstrated on the example of 32x12 LWIR FPA. Mean NEP value of 5.4x10(-14) W/Hz(1/2) with lambda(c) = 10.6 mu m at 80K operation were obtained. Using an infrared camera system the infrared image was successfully demonstrated, The NETD value of 0.077K was obtained under 293K background condition.