Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

被引：2
|
作者：
Liu, K. W. [2 ]
Young, S. J. [1 ]
Chang, S. J. [2 ,3 ,4 ,5 ]
Hsueh, T. H. [2 ]
Chen, Y. Z. [5 ]
Chen, K. J. [3 ,4 ]
Hung, H. [3 ,4 ]
Wang, S. M. [3 ,4 ]
Wu, Y. L. [5 ]
机构：
[1] Natl Formosa Univ, Dept Elect Engn, Huwei 632, Yunlin, Taiwan
[2] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 701, Taiwan
[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 701, Taiwan
[5] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 701, Taiwan
来源：
JOURNAL OF CRYSTAL GROWTH | 2012年 / 347卷 / 01期
关键词：
Molecular beam epitaxy; Nitrides; Semiconducting III-V materials; INDIUM NITRIDE NANOWIRES; LIGHT-EMITTING-DIODES; GAN;
D O I：
10.1016/j.jcrysgro.2012.03.021
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：113 / 118
页数：6
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