Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

被引：2

作者：

Liu, K. W. ^{[2
]}

Young, S. J. ^{[1
]}

Chang, S. J. ^{[2
,3
,4
,5
]}

Hsueh, T. H. ^{[2
]}

Chen, Y. Z. ^{[5
]}

Chen, K. J. ^{[3
,4
]}

Hung, H. ^{[3
,4
]}

Wang, S. M. ^{[3
,4
]}

Wu, Y. L. ^{[5
]}

机构：

[1] Natl Formosa Univ, Dept Elect Engn, Huwei 632, Yunlin, Taiwan

[2] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 701, Taiwan

[5] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 701, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 347卷 / 01期

关键词：

Molecular beam epitaxy; Nitrides; Semiconducting III-V materials; INDIUM NITRIDE NANOWIRES; LIGHT-EMITTING-DIODES; GAN;

D O I：

10.1016/j.jcrysgro.2012.03.021

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：113 / 118

页数：6

共 50 条

[41] Effect of Plasma Conditions on the Growth of GaNAs by Plasma-Assisted Molecular-Beam Epitaxy
Uchiyama, Masayuki
Ishikawa, Fumitaro
Kondow, Masahiko
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (08) : 0811021 - 0811024
[42] Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy
Chung, Yee Ling
Peng, Xingyu
Liao, Ying Chieh
Yao, Shude
Chen, Li Chyong
Chen, Kuei Hsien
Feng, Zhe Chuan
THIN SOLID FILMS, 2011, 519 (20) : 6778 - 6782
[43] Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy
Chai, Jessica H.
Song, Young-Wook
Reeves, Roger J.
Durbin, Steven M.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (01): : 95 - 99
[44] In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy
Kruse, C
Einfeldt, S
Böttcher, T
Hommel, D
APPLIED PHYSICS LETTERS, 2001, 79 (21) : 3425 - 3427
[45] Growth and electronic properties of ZnO epilayers by plasma-assisted molecular beam epitaxy
Murphy, TE
Chen, DY
Phillips, JD
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (06) : 699 - 703
[46] Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy
Iliopoulos, E
Moustakas, TD
APPLIED PHYSICS LETTERS, 2002, 81 (02) : 295 - 297
[47] GaN Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy
Yu, Ing-Song
Liang, Wen-Han
Yang, Dian-Long
Yang, Chung-Pei
Chang, Chun-Pu
Lin, Chun-Ting
Chen, Chun-Chi
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2015, 7 (10) : 828 - 833
[48] In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries
Yoshitani, M
Akasaka, K
Wang, X
Che, SB
Ishitani, Y
Yoshikawa, A
JOURNAL OF APPLIED PHYSICS, 2006, 99 (04)
[49] Growth and electronic properties of ZnO epilayers by plasma-assisted molecular beam epitaxy
T. E. Murphy
D. Y. Chen
J. D. Phillips
Journal of Electronic Materials, 2005, 34 : 699 - 703
[50] Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy
Gruart, M.
Feldberg, N.
Gayral, B.
Bougerol, C.
Pouget, S.
Bellet-Amalric, E.
Garro, N.
Cros, A.
Okuno, H.
Daudin, B.
NANOTECHNOLOGY, 2020, 31 (11)

← 1 2 3 4 5 →