Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy

被引：4
|
作者：
Yao, Yong-Zhao [1 ]
Sekiguchi, Takashi
Ohgaki, Takeshi
Adachi, Yutaka [1 ]
Ohashi, Naoki [1 ]
Okuno, Hanako
Takeguchi, Masaki
机构：
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期
关键词：
diffusion; III-V semiconductors; indium compounds; molecular beam epitaxial growth; plasma materials processing; semiconductor growth; surfactants; wide band gap semiconductors; GAN;
D O I：
10.1063/1.3189262
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the self-surfactant effect of In for N-polar InN growth by plasma-assisted molecular-beam epitaxy. We found that InN quality was significantly improved if a thin In coverage (about 1.8 ML) was introduced before InN growth. However, this In coverage was slowly consumed during subsequent InN growth under N-rich condition. Periodically restoring In coverage for thick InN growth was proposed to solve this consumption problem. We suggest that the effect of In surfactant is to terminate the surface N dangling bonds and form an In adlayer, under which an efficient diffusion channel for lateral N adatom transport is created.
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页数：3
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