Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

被引：20
|
作者：
Dasgupta, Sansaptak [1 ]
Nidhi [1 ]
Choi, Soojeong [2 ]
Wu, Feng [2 ]
Speck, James S. [2 ]
Mishra, Umesh K. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 04期
关键词：
D O I：
10.1143/APEX.4.045502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
N-polar In(x)Al(1-x)N (0: 02 < x < 0: 65) films were grown and characterized by plasma-assisted molecular beam epitaxy (PAMBE). Indium incorporation in the films was characterized both as a function of the impinging In and Al flux and the growth temperature. In incorporation in the film was found to decrease with increasing growth temperature (T(gr)) for T(gr) > 560 degrees C. A smooth surface morphology was obtained for In(0.18)Al(0.82)N lattice-matched to GaN. Subsequently, N-polar In(0.18)Al(0.82)N was used as a charge-inducing barrier in a N-polar GaN HEMT structure and electrical characterizations including current-voltage (I-V) measurements were performed. (C) 2011 The Japan Society of Applied Physics
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