Investigation of Parasitic Coupling of THz Radiation to a Large Area Field-Effect Transistor

被引：0

作者：

Regensburger, Stefan ^{[1
]}

Winnerl, Stephan ^{[1
]}

Klopf, J. Michael ^{[2
]}

Lu, Hong ^{[3
,4
]}

Gossard, Arthur C. ^{[3
]}

Preu, Sascha ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Terahertz Syst Technol, Darmstadt, Germany

[2] Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany

[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[4] Nanjing Univ, Coll Engn & Appl Sci, Nanjing, Peoples R China

来源：

2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

THz radiation can couple in various undesired ways to THz detectors, e.g. through wires or contact pads, aggravating calculation of sensible values for the device responsivity. We therefore investigate coupling of THz radiation to antenna-less large area field-effect transistors with dimensions in the range of the THz spot size proving that only a very small fraction of power is coupled through the pads.

引用

页数：2

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