Investigation of Parasitic Coupling of THz Radiation to a Large Area Field-Effect Transistor

被引：0

作者：

Regensburger, Stefan ^{[1
]}

Winnerl, Stephan ^{[1
]}

Klopf, J. Michael ^{[2
]}

Lu, Hong ^{[3
,4
]}

Gossard, Arthur C. ^{[3
]}

Preu, Sascha ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Terahertz Syst Technol, Darmstadt, Germany

[2] Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany

[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[4] Nanjing Univ, Coll Engn & Appl Sci, Nanjing, Peoples R China

来源：

2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

THz radiation can couple in various undesired ways to THz detectors, e.g. through wires or contact pads, aggravating calculation of sensible values for the device responsivity. We therefore investigate coupling of THz radiation to antenna-less large area field-effect transistors with dimensions in the range of the THz spot size proving that only a very small fraction of power is coupled through the pads.

引用

页数：2

共 50 条

[21] Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor
Vilas Boas, Alexis C.
de Melo, M. A. A.
Santos, R. B. B.
Giacomini, R. C.
Medina, N. H.
Seixas, L. E.
Palomo, F. R.
Guazzelli, Marcilei A.
2019 34TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2019), 2019,
[22] LARGE-SIGNAL EQUIVALENT CIRCUIT OF A FIELD-EFFECT TRANSISTOR
STENIN, VY
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1972, (02) : 140 - 142
[23] Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector
Cibiraite-Lukenskiene, Dovile
Ikamas, Kestutis
Lisauskas, Tautvydas
Krozer, Viktor
Roskos, Hartmut G.
Lisauskas, Alvydas
SENSORS, 2020, 20 (15) : 1 - 14
[24] STATIC LARGE-SIGNAL FIELD-EFFECT TRANSISTOR MODELS
WEDLOCK, BD
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (04): : 593 - &
[25] Investigation of electronic properties of graphene/Si field-effect transistor
Xiying Ma
Weixia Gu
Jiaoyan Shen
Yunhai Tang
Nanoscale Research Letters, 7
[26] Investigation of electronic properties of graphene/Si field-effect transistor
Ma, Xiying
Gu, Weixia
Shen, Jiaoyan
Tang, Yunhai
NANOSCALE RESEARCH LETTERS, 2012, 7
[27] THE FIELD-EFFECT TRANSISTOR - A REVIEW
WALLMARK, JT
RCA REVIEW, 1963, 24 (04): : 641 - 660
[28] ON FIELD-EFFECT TRANSISTOR CHARACTERISTICS
WEDLOCK, BD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (03) : 181 - &
[29] FIELD-EFFECT TRANSISTOR CHARACTERIZATION
ROIZES, A
DAVID, JP
RECHERCHE AEROSPATIALE, 1990, (02): : 17 - 29
[30] FIELD-EFFECT TRANSISTOR CIRCULATORS
AYASLI, Y
IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (05) : 3242 - 3247

← 1 2 3 4 5 →