Investigation of Stability of the pH-Sensitive Field-Effect Transistor Characteristics

被引：7
|
作者：
Pavluchenko, A. S. [1 ]
Kukla, A. L. [1 ]
Goltvianskyi, Yu. V. [1 ]
Soldatkin, O. O. [2 ]
Arkhypova, V. M. [2 ]
Dzyadevych, S. V. [2 ]
Soldatkin, A. P. [2 ]
机构：
[1] Natl Acad Sci Ukraine, VE Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Natl Acad Sci Ukrain, Inst Mol Biol & Genet, UA-03143 Kiev, Ukraine
来源：
SENSOR LETTERS | 2011年 / 9卷 / 06期
关键词：
Ion-Selective Field Effect Transistor; Silicon Nitride; Threshold Voltage; Drift; DOUBLE-LAYER; CAPACITANCE;
D O I：
10.1166/sl.2011.1797
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The drift of threshold voltage of the p-channel ion-selective field-effect transistors with induced channel caused by long-term influence of negative voltage applied to the channel area through the two-layer SiO2/Si3N4 gate dielectric is investigated. Based on the experimental data a mechanism of the observed instability is proposed and corresponding design and technology enhancements improving sensor stability for prolonged continuous measurements are outlined.
引用
收藏
页码：2392 / 2396
页数：5
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