Total Ionizing Dose Tests on Ferroelectric Random Access Memories

被引：0
|
作者：
Gu, Ke [1 ]
Li, Ping [1 ]
Li, Wei [1 ]
Fan, Xue [1 ]
Zhai, Yahong [1 ]
Hu, Bin [1 ]
Liu, Yang [1 ]
Li, Zuxiong [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年
关键词：
ferroelectric random access memory; total ionizing dose; radiation effect;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the Cobalt-60 radiation test results of two different sizes of ferroelectric random access memories: 4Kb Ramtron FM25L04 and 16Kb Ramtron FM24CLI6. The change of supply currents and the functional failures with respect to the total ionizing dose (TID) are obtained respectively to assess the radiation tolerance. The supply currents increased rapidly after 18 and 30 krad(Si) respectively for the FM25L04 and FM24CL16 devices. The FM25L04 devices had some read errors under 50 krad(Si), while the FM24CL16 devices withstood a TID up to 100 krad(Si) with no data corruption.
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页数：2
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