Total Ionizing Dose Tests on Ferroelectric Random Access Memories

被引：0

作者：

Gu, Ke ^{[1
]}

Li, Ping ^{[1
]}

Li, Wei ^{[1
]}

Fan, Xue ^{[1
]}

Zhai, Yahong ^{[1
]}

Hu, Bin ^{[1
]}

Liu, Yang ^{[1
]}

Li, Zuxiong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年

关键词：

ferroelectric random access memory; total ionizing dose; radiation effect;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the Cobalt-60 radiation test results of two different sizes of ferroelectric random access memories: 4Kb Ramtron FM25L04 and 16Kb Ramtron FM24CLI6. The change of supply currents and the functional failures with respect to the total ionizing dose (TID) are obtained respectively to assess the radiation tolerance. The supply currents increased rapidly after 18 and 30 krad(Si) respectively for the FM25L04 and FM24CL16 devices. The FM25L04 devices had some read errors under 50 krad(Si), while the FM24CL16 devices withstood a TID up to 100 krad(Si) with no data corruption.

引用

页数：2

共 50 条

[41] Dynamic faults in random-access-memories: Concept, fault models and tests
Hamdioui, S
Al-Ars, Z
van de Goor, AJ
Rodgers, M
JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 2003, 19 (02): : 195 - 205
[42] RANDOM-ACCESS MEMORIES
CHAMBERLIN, DC
ELECTRONIC PRODUCTS MAGAZINE, 1981, 23 (10): : 45 - &
[43] Total Ionizing Dose Effect in Tri-gate Silicon Ferroelectric Transistor Memory
Aabrar, Khandker Akif
Read, James
Kirtania, Sharadindu Gopal
Stepanoff, Sergei
Wolfe, Douglas E.
Yu, Shimeng
Datta, S.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,
[44] Analyzing Total-Ionizing-Dose Induced Memory Window Degradation in Ferroelectric FinFET
Woo, Sola
Aabrar, Khandker Akif
Datta, Suman
Yu, Shimeng
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 24 (01) : 84 - 88
[45] Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation
肖尧
郭红霞
张凤祁
赵雯
王燕萍
张科营
丁李利
范雪
罗尹虹
王园明
Chinese Physics B, 2014, (11) : 616 - 619
[46] Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation
Xiao Yao
Guo Hong-Xia
Zhang Feng-Qi
Zhao Wen
Wang Yan-Ping
Zhang Ke-Ying
Ding Li-Li
Fan Xue
Luo Yin-Hong
Wang Yuan-Ming
CHINESE PHYSICS B, 2014, 23 (11)
[47] The GEO total ionizing dose
Solin, JR
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) : 2964 - 2971
[48] Total Ionizing Dose Effects on Read Noise of MLC 3-D NAND Memories
Surendranathan, Umeshwarnath
Wasiolek, Maryla
Hattar, Khalid
Fleetwood, Daniel M.
Ray, Biswajit
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 69 (03) : 321 - 326
[49] Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 memories
Amrbar, Mehran
Guertin, Steven M.
2016 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2016, : 199 - 204
[50] SEMICONDUCTOR MEMORIES . MOS RANDOM-ACCESS MEMORIES
ROOP, D
ELECTRONIC PRODUCTS MAGAZINE, 1970, 12 (10): : 96 - &

← 1 2 3 4 5 →