Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (001) substrates

被引：1
|
作者：
Poydenot, V
Dujardin, R
Fournel, F
Rouvière, JL
Barski, A
机构：
[1] CEA, DSM, DRFMC, SP2M,GRE, F-38054 Grenoble, France
[2] CEA, DRT, LETI, GRE, F-38054 Grenoble, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期
关键词：
molecular bonding; nanostructures; organized growth; germanium;
D O I：
10.1016/j.jcrysgro.2004.12.167
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Highly ordered germanium nanostructures are grown by molecular beam epitaxy (MBE) on molecularly bonded silicon (001) substrates. For high twist-angle-bonded substrates (twist angle as high as 20 degrees), a one-dimensional organization of growth is induced by an interfacial network of mixed tilt dislocations. Depending on growth conditions, we were able to achieve ail organized growth of germanium dots, hut islands and wires. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：83 / 87
页数：5
相关论文
共 50 条
  • [31] Microstructure of GaN layers grown onto (001) and (111)GaAs substrates by molecular beam epitaxy
    Tóth, L
    Pécz, B
    Czigány, Z
    Amimer, K
    Georgakilas, A
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 999 - 1002
  • [32] ANTIPHASE BOUNDARY OF GAAS FILMS GROWN ON SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    KAWANAMI, H
    HATAYAMA, A
    HAYASHI, Y
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (05) : 341 - 349
  • [33] InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy
    Li, H
    Wang, Z
    Liang, J
    Xu, B
    Wu, J
    Gong, Q
    Jiang, C
    Liu, F
    Zhou, W
    JOURNAL OF CRYSTAL GROWTH, 1998, 187 (3-4) : 564 - 568
  • [34] Sb-based laser sources grown by molecular beam epitaxy on silicon substrates
    Rodriguez, J. B.
    Cerutti, L.
    Grech, P.
    Boissier, G.
    Narcy, G.
    Tournie, E.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS IX, 2010, 7616
  • [35] InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
    Khmissi, H.
    Naji, K.
    Alouane, M. H. Hadj
    Chauvin, N.
    Bru-Chevallier, C.
    Ilahi, B.
    Patriarche, G.
    Gendry, M.
    JOURNAL OF CRYSTAL GROWTH, 2012, 344 (01) : 45 - 50
  • [36] Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
    Rojas-Trigos, J. B.
    Lopez-Lopez, M.
    Venegas, M. A.
    Contreras-Puente, G. S.
    Jimenez-Olarte, D.
    Santana-Rodriguez, G.
    REVISTA MEXICANA DE FISICA, 2016, 62 (01) : 68 - 72
  • [37] Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates
    Grandal, J
    Sánchez-García, MA
    Calle, F
    Calleja, E
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2289 - 2292
  • [38] AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates
    Cirlin, G. E.
    Reznik, R. R.
    Shtrom, I., V
    Khrebtov, A., I
    Soshnikov, I. P.
    Kukushkin, S. A.
    Leandro, L.
    Kasama, T.
    Akopian, Nika
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (48)
  • [39] Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
    Heo, Junseok
    Zhou, Zifan
    Guo, Wei
    Ooi, Boon S.
    Bhattacharya, Pallab
    APPLIED PHYSICS LETTERS, 2013, 103 (18)
  • [40] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
    Jin, Ri Guo
    Yagi, Shuhei
    Hijikata, Yasuto
    Kuboya, Shigeyuki
    Onabe, Kentaro
    Katayama, Ryuji
    Yaguchi, Hiroyuki
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 85 - 87
12345