Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (001) substrates

被引：1
|
作者：
Poydenot, V
Dujardin, R
Fournel, F
Rouvière, JL
Barski, A
机构：
[1] CEA, DSM, DRFMC, SP2M,GRE, F-38054 Grenoble, France
[2] CEA, DRT, LETI, GRE, F-38054 Grenoble, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期
关键词：
molecular bonding; nanostructures; organized growth; germanium;
D O I：
10.1016/j.jcrysgro.2004.12.167
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Highly ordered germanium nanostructures are grown by molecular beam epitaxy (MBE) on molecularly bonded silicon (001) substrates. For high twist-angle-bonded substrates (twist angle as high as 20 degrees), a one-dimensional organization of growth is induced by an interfacial network of mixed tilt dislocations. Depending on growth conditions, we were able to achieve ail organized growth of germanium dots, hut islands and wires. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：83 / 87
页数：5
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