Silicon Filled Integrated Waveguides

被引：5

作者：

Gentile, G. ^{[1
]}

Dekker, Ronald ^{[1
,2
]}

de Graaf, Pascal ^{[2
]}

Spirito, M. ^{[1
]}

Pelk, M. J. ^{[1
]}

de Vreede, L. C. N. ^{[1
]}

Salmassi, B. Rejaei ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES Inst, NL-2628 CT Delft, Netherlands

[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 10期

关键词：

Millimeter-wave; silicon filled; silicon-on-glass; substrate integrated waveguide (SIW); substrate transfer;

D O I：

10.1109/LMWC.2010.2063420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE10-like operating mode, average losses as low as 0.10 dB/mm with a slow-wave factor of 2.5 were observed. The measurement results are in excellent agreement with HFSS simulations, validating the usability of these structures as a new component in mm-wave IC-designs.

引用

页码：536 / 538

页数：3

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