Erbium-doped oxidized porous silicon for integrated optical waveguides

被引：6
|
作者：
Bondarenko, VP [1 ]
Yakovtseva, VA
Dolgii, LN
Vorozov, NN
Kazyuchits, NM
Tsybeskov, L
Foucher, F
机构：
[1] Belorussian State Univ Informat & Radio Elect, Minsk, BELARUS
[2] Belarusian State Univ, Minsk 220050, BELARUS
[3] Univ Rochester, Rochester, NY 14626 USA
来源：
TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 09期
关键词：
D O I：
10.1134/1.1262606
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown for the first time that introducing erbium electrochemically into waveguide structures based on oxidized porous silicon not only preserves their waveguide properties but it also opens up prospects for producing active waveguide devices based on them. It is established that erbium in a waveguide is in an optically active state and light with wavelengths 381 and 523 nm excites the erbium ions most efficiently. (C) 1999 American Institute of Physics. [S1063-7850(99)01209-4].
引用
收藏
页码：705 / 706
页数：2
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