Silicon Filled Integrated Waveguides

被引：5
|
作者：
Gentile, G. [1 ]
Dekker, Ronald [1 ,2 ]
de Graaf, Pascal [2 ]
Spirito, M. [1 ]
Pelk, M. J. [1 ]
de Vreede, L. C. N. [1 ]
Salmassi, B. Rejaei [1 ]
机构：
[1] Delft Univ Technol, DIMES Inst, NL-2628 CT Delft, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 10期
关键词：
Millimeter-wave; silicon filled; silicon-on-glass; substrate integrated waveguide (SIW); substrate transfer;
D O I：
10.1109/LMWC.2010.2063420
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report, for the first time, a silicon-filled integrated waveguide based on a two mask integrated circuit (IC) process and substrate transfer technique. The fabrication process offers a high degree of control and repeatability on the device geometrical dimensions. Waveguide structures with cutoff frequencies of 35, 50, and 77 GHz were designed and fabricated. In the fundamental TE10-like operating mode, average losses as low as 0.10 dB/mm with a slow-wave factor of 2.5 were observed. The measurement results are in excellent agreement with HFSS simulations, validating the usability of these structures as a new component in mm-wave IC-designs.
引用
收藏
页码：536 / 538
页数：3
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