Post Fabrication Tuning of GaN Based RF Power Amplifiers for Pico-Cell Applications

被引：0
|
作者：
Hasin, Muhammad Ruhul [1 ]
Kitchen, Jennifer [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
来源：
2016 IEEE 34TH VLSI TEST SYMPOSIUM (VTS) | 2016年
关键词：
RF; Power Amplifier; GaN; Production Tuning;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The RF Power Amplifier (PA) is usually the bottleneck in designing high efficiency, high linearity wireless transceivers within any given power specification. Pico-cell basestation PAs deliver power in the range of 10 Watts, with aggressive gain and efficiency requirements for next generation cellular networks. The slightest variations in PA biasing or the input and output load networks can cause significant degradation in RF PA performance. This work discusses the impact of process variation and variability in input/output networks on RF performance, and suggests ways to regain various performance parameters through post fabrication tuning of the PA.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] An Artificial Neural Network for Wideband Pre-distortion of Efficient Pico-cell Power Amplifiers
    Ngwar, Mehn K.
    Wight, Jim S.
    2014 6TH INTERNATIONAL SYMPOSIUM ON COMMUNICATIONS, CONTROL AND SIGNAL PROCESSING (ISCCSP), 2014, : 562 - 565
  • [2] GaN-Based RF power devices and amplifiers
    Mishra, Umesh K.
    Shen, Likun
    Kazior, Thomas E.
    Wu, Yi-Feng
    PROCEEDINGS OF THE IEEE, 2008, 96 (02) : 287 - 305
  • [3] MMIC Doherty Power Amplifier for a 5W Pico-Cell Base Station in GaN HFET Technology
    Seneviratne, S. G.
    Yagoub, M. C. E.
    Amaya, R. E.
    2012 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM), 2012,
  • [4] Nonlinear Modelling of RF GaN Devices and Utilization in RF Power Amplifiers for 4G Applications
    Abdelbar, Abdelaziz M. A.
    El-Tager, Ayman M.
    PROCEEDINGS 2018 INTERNATIONAL CONFERENCE ON HIGH PERFORMANCE COMPUTING & SIMULATION (HPCS), 2018, : 69 - 75
  • [5] A review of GaN RF devices and power amplifiers for 5G communication applications
    Lu, Hao
    Zhang, Meng
    Yang, Ling
    Hou, Bin
    Martinez, Rafael Perez
    Mi, Minhan
    Du, Jiale
    Deng, Longge
    Wu, Mei
    Chowdhury, Srabanti
    Ma, Xiaohua
    Hao, Yue
    FUNDAMENTAL RESEARCH, 2025, 5 (01): : 315 - 331
  • [6] GaN based HEMT technology for Power and RF applications
    Heuken, Michael
    49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019), 2019, : 17 - 20
  • [7] Solid-State RF Power Amplifiers for ISM CW Applications Based on 100 V GaN Technology
    Formicone, Gabriele
    Burger, Jeff
    Custer, James
    Bosi, Gianni
    Raffo, Antonio
    Vannini, Giorgio
    2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 33 - 36
  • [8] Linearity Improvement of GaN HEMT for RF Power Amplifiers
    Inoue, Kazutaka
    Yamamoto, Hiroshi
    Nakata, Ken
    Yamada, Fumio
    Yamamoto, Takashi
    Sano, Seigo
    2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2013,
  • [9] AlGaN/GaN power amplifiers for ISM applications
    Krausse, D.
    Benkhelifa, F.
    Reiner, R.
    Quay, R.
    Ambacher, O.
    SOLID-STATE ELECTRONICS, 2012, 74 : 108 - 113
  • [10] Adaptive Bias-Sequencing Circuit for GaN-based RF Power Amplifiers
    Qazi, Mudassar A.
    Sarmad, Syed Muhammad
    Cheema, Hammad M.
    2021 1ST INTERNATIONAL CONFERENCE ON MICROWAVE, ANTENNAS & CIRCUITS (ICMAC), 2021,
12345