Post Fabrication Tuning of GaN Based RF Power Amplifiers for Pico-Cell Applications

被引：0
|
作者：
Hasin, Muhammad Ruhul [1 ]
Kitchen, Jennifer [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
来源：
2016 IEEE 34TH VLSI TEST SYMPOSIUM (VTS) | 2016年
关键词：
RF; Power Amplifier; GaN; Production Tuning;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The RF Power Amplifier (PA) is usually the bottleneck in designing high efficiency, high linearity wireless transceivers within any given power specification. Pico-cell basestation PAs deliver power in the range of 10 Watts, with aggressive gain and efficiency requirements for next generation cellular networks. The slightest variations in PA biasing or the input and output load networks can cause significant degradation in RF PA performance. This work discusses the impact of process variation and variability in input/output networks on RF performance, and suggests ways to regain various performance parameters through post fabrication tuning of the PA.
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页数：4
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